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APTM50AM19ST
Phase leg Schottky Series & parallel diodes MOSFET Power Module
NTC2 VBUS Q1
VDSS = 500V RDSon = 19mW max @ Tj = 25C ID = 170A @ Tc = 25C
Application * * * Motor control Switched Mode Power Supplies Uninterruptible Power Supplies
G1 OUT S1 Q2
Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated - Very rugged Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connections Internal thermistor for temperature monitoring High level of integration
G2
0/VBU S S2 NTC1
* * * *
VBUS
0/VBUS
OUT
Benefits * * * * Outstanding performance at high frequency operation Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals for signal and M5 for power for easy PCB mounting Max ratings 500 170 125 360 30 19 1250 46 50 2500 Unit V A V mW W A mJ
NTC1 NTC2
G1 S1
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
S2 G2
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
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APTM50AM19ST
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V, ID = 500A
VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V
Min 500 Tj = 25C
Tj = 125C
Typ
Max 500 2000 19 5 200
Unit V A mW V nA
VGS = 10V, ID = 85A VGS = VDS, ID = 10mA VGS = 30 V, VDS = 0V
3
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v Turn-on Switching Energy u Turn-off Switching Energy v Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 170A Inductive switching @ 125C VGS = 15V VBus = 333V ID = 170A RG = 1W Inductive switching @ 25C VGS = 15V, VBus = 333V ID = 170A, RG = 1 Inductive switching @ 125C VGS = 15V, VBus = 333V ID = 170A, RG = 1 Min Typ 22.4 4.8 0.36 492 132 260 18 35 87 77 3020 2904 4964 3384 J J ns Max Unit nF
nC
Series Schottky diode ratings and characteristics
Symbol Characteristic Maximum Average Forward Current IF(AV) VF Diode Forward Voltage Test Conditions 50% duty cycle IF = 120A IF = 120A Min Tc = 85C Tj = 125C Typ 120 0.77 0.62 Max Unit A V
u Eon includes diode reverse recovery. v In accordance with JEDEC standard JESD24-1.
APT website - http://www.advancedpower.com
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APTM50AM19ST
Parallel diode ratings and characteristics
Symbol Characteristic Maximum Average Forward Current IF(AV) VF Diode Forward Voltage Test Conditions 50% duty cycle IF = 180A IF = 360A IF = 180A IF = 180A VR = 400V di/dt = 600A/s IF = 180A VR = 400V di/dt = 600A/s Min Tc = 70C Typ 180 1.6 1.9 1.4 130 170 660 2760 Max 1.8 V Unit A
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
trr Qrr
Reverse Recovery Time Reverse Recovery Charge
ns nC
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Transistor Series Diode Parallel diode 2500 -40 -40 -40 2 2 Min Typ Max 0.1 0.5 0.32 150 125 100 3.5 3.5 620 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M5 M5
Temperature sensor NTC
Symbol Characteristic Resistance @ 25C R25 B 25/85 T25 = 298.16 K
RT = R 25 e ae1 1 ou T: Thermistor temperature exp e B25 / 85 c c T - T /u RT: Thermistor value at T / e 25 ou e
Min
Typ 68 4080
Max
Unit kW K
APT website - http://www.advancedpower.com
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May, 2004
APTM50AM19ST
Package outline
Ra 3,2
APT website - http://www.advancedpower.com
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APTM50AM19ST
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.12 Thermal Impedance (C/W) 0.1 0.08 0.06 0.04 0.02 0.9 0.7 0.5 0.3 0.1 0.05 0 0.00001 0.0001 Single Pulse 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 1 10
Low Voltage Output Characteristics 700 ID, Drain Current (A) VGS=10&15V ID, Drain Current (A) 600 500 400 300 200 100 0 0 5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current ID, DC Drain Current (A)
Normalized to VGS=10V @ 85A
Transfert Characteristics 500
VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
8V 7.5V 7V 6.5V 6V 5.5V
400 300 200 100
TJ=25C TJ=125C TJ=-55C
0 25
0
1
2
3
4
5
6
7
8
VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 180 160 140 120 100 80 60 40 20 0
RDS(on) Drain to Source ON Resistance
1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 0
VGS=10V
VGS=20V
100
200
300
400
25
ID, Drain Current (A)
50 75 100 125 TC, Case Temperature (C)
150
May, 2004
APT website - http://www.advancedpower.com
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APTM50AM19ST
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 Ciss C, Capacitance (pF) 10000 Coss VGS, Gate to Source Voltage (V) 1000
limited by RDSon
2.5 2.0 1.5 1.0 0.5 0.0
ON resistance vs Temperature
VGS=10V ID=85A
-50 -25
0
25
50
75 100 125 150
TJ, Junction Temperature (C) Maximum Safe Operating Area
100
limited by RDSon
100s
10 Single pulse TJ=150C 1 1
1ms 10ms 100ms
10 100 1000 VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 14 VCE=100V ID=170A 12 T =25C J V =250V
CE
10 8 6 4 2 0 0 80 160 240 320 400 480 560 640 Gate Charge (nC)
May, 2004
VCE=400V
1000
Crss
100
10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50
APT website - http://www.advancedpower.com
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Delay Times vs Current 100 80 60 40 20 0 20 60 100 140 180 220 260 ID, Drain Current (A) Switching Energy vs Current 10 Switching Energy (mJ) 8 6 4 2 0 20 60 100 140 180 220 260 ID, Drain Current (A) Operating Frequency vs Drain Current 350 Frequency (kHz) 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 ID, Drain Current (A)
VDS=333V D=50% RG=1 TJ=125C VDS=333V RG=1 TJ=125C L=100H
Rise and Fall times vs Current
td(off)
120 100
tr and tf (ns)
VDS=333V RG=1 TJ=125C L=100H
td(on) and td(off) (ns)
tf
80 60 40 20 0 20
td(on)
tr
60
100
140
180
220
260
ID, Drain Current (A) Switching Energy vs Gate Resistance 16 Switching Energy (mJ) 14 12 10 8 6 4 2 0 0 2.5 5 7.5 10 12.5 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage Eon
VDS=333V ID=170A TJ=125C L=100H
VDS=333V RG=1 TJ=125C L=100H
Eon
Eoff
Eoff
IDR, Reverse Drain Current (A)
400
1000
TJ=150C 100
10
TJ=25C
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VSD, Source to Drain Voltage (V)
May, 2004
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
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APTM50AM19ST - Rev 1

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